by GaN semiconductors are extensively used in the manufacturing of high power RF devices owing to their wide bandgap and high electron mobility. GaN semiconductors allow miniaturization of RF components enabling better performance and compact system design. They enable higher power density and increased efficiency in applications including radio/wireless infrastructure, satellite communications, radar and electronic warfare systems. The global GaN Semiconductor Market is estimated to be valued at US$ 3 Billion in 2024 and is expected to exhibit a CAGR of 18% over the forecast period 2024 to 2031, as highlighted in a new report published by Coherent Market Insights.
Market key trends:
The rising demand for high power RF devices is primarily driving the growth of the GaN semiconductor market. GaN semiconductors offer significant performance and functional advantages over silicon and gallium arsenide in microwave and millimeter-wave applications. They enable RF power transistors and MMICs to operate at higher voltages, switching frequencies and power densities than their silicon and gallium arsenide counterparts. This enables miniaturization and more compact system designs for various RF applications including 5G telecom base stations, satellite communications, radar systems and military radios. With increasing deployment of 5G networks globally, the demand for high power RF components is expected to rise significantly thereby propelling the GaN semiconductor market during the forecast period.
SWOT Analysis
Strength: GaN offers up to 10x the breakdown voltage of silicon and 3x the power density, enabling smaller and more efficient power electronics. Weakness: High cost of GaN wafers and devices compared to silicon. Opportunity: Growing demand for fast and high-power charging solutions in telecom infrastructure, automotive, and consumer electronics. Threats: Competition from new wide bandgap materials like SiC and established silicon semiconductors.
Key Takeaways
The global GaN Semiconductor market demand is expected to witness high growth.
Regional analysis:
Asia Pacific dominates the GaN Semiconductor market and is expected to grow at the highest CAGR during the forecast period. Rising demand for GaN semiconductors from communication infrastructure and electric vehicle manufacturers drives the market growth in the region.
Key players
operating in the GaN Semiconductor are Cree Inc., Efficient Power Conversion (EPC), Infineon, GaN Systems, MACOM, Microsemi, Navitas Semiconductor, Qorvo, Exagan, and Toshiba. GaN Systems is a leading player in high-performance power switching semiconductors based on GaN. The company provides transistors and integrated circuits to OEMs and system manufacturers globally. Infineon offers GaN power switches for electric vehicle fast charging. MACOM designs and manufactures gallium arsenide (GaAs) and GaN semiconductors for radio frequency (RF), microwave, and millimeterwave applications.
*Note:
1. Source: Coherent Market Insights, Public sources, Desk research
2. We have leveraged AI tools to mine information and compile it
